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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW78 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB or B operated mobile, industrial and military transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 12" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW78
QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION c.w. (class-B) s.s.b. (class-A) s.s.b. (class-AB) Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. VCE V 28 26 28 3 0,05 IC IC(ZS) A - f MHz 150 28 28 100 35 (P.E.P.) 100 (P.E.P.) PL W > Gp dB 6 > - typ. 42 typ. 19,5 typ. 19,0 % 70 d3(1) dB - typ. -40 typ. -30
PIN CONFIGURATION
PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage 4
3
1 2 3 4
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW78
70 V 35 V 4V 10 A 25 A 160 W 200 C
-65 to +150 C
102 handbook, halfpage
MGP543
handbook, halfpage
200
MGP544
IC (A)
Prf (W)
150
derate by 0.79 W/K
10 Th = 70 C Tmb = 25 C
100
derate by 0.61 W/K
1 1 10 VCE (V)
102
50 0 50 Th (C) 100
I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; VCE 28 V; f > 1 MHz.
THERMAL RESISTANCE (dissipation = 80 W; Tmb = 86 C; i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 1,45 K/W 1,06 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 5 mA Collector cut-off current VBE = 0; VCE = 35 V D.C. current gain(1) hFE VCEsat MHz(2) fT fT Cc Cre Ccf 20 to 85 typ. 2V IC = 5 A; VCE = 5 V Collector-emitter saturation voltage IC = 15 A; IB = 3 A Transition frequency at f = 100 -IE = 5 A; VCB = 28 V -IE = 15 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01. typ. 102 pF typ. 3 pF typ. 155 pF ICES < 5 mA V(BR)EBO > 4V V(BR)CEO > 35 V V(BR)CES > 70 V
BLW78
typ. 370 MHz typ. 350 MHz
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
handbook, halfpage
75
MGP545
handbook, halfpage
600
MGP546
hFE 50
VCE = 28 V
Cc (pF) 400
5V
typ 25 200
0 0 5 IC (A) 10
0 0 20 VCB (V) 40
Fig.4 Typical values; Tj = 25 C.
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
750
MGP547
fT (MHz)
500
VCB = 28 V 20 V 250
0 0 5 10 15 20 -IE (A) 25
Fig.6 Typical values; f = 100 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
HF/VHF power transistor
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 150 VCE (V) 28 PL (W) 100 PD (W) 25 (%) 70 zi () 0,74 + j1,35
BLW78
ZL () 4,30 + j0,60
handbook, full pagewidth
L5 C1 50 C2 L1 L3 T.U.T. C4 L2 C3 C5 C6 L4
C8 50 C7
+VCC
MGP548
Fig.7 Test circuit; c.w. class-B; f = 150 MHz.
List of components: C1 = C2 = C7 = C8 = 5 to 100 pF film dielectric trimmer C3 = 203 pF; 2 x 82 pF and 39 pF multilayer ceramic chip capacitors (500 V, ATC(1)) in parallel C4 = 39 pF multilayer ceramic chip capacitor (500 V, ATC(1)) C5 = 1 nF feed-through capacitor C6 = 100 nF polyester capacitor L1 = strip (30 mm x 8 mm); bent to form inverted `U' shape with top 15 mm above heatsink, and bottom 5 mm above heatsink L2 = 1 H r.f. choke L3 = strip; shape as shown in Fig.8; 5 mm above heatsink L4 = strip (40 mm x 8 mm); bent in form , 25 mm at 15 mm above heatsink, 5 mm at 5 mm above heatsink L5 = strip (75 mm long; width 8 mm); 5 mm above base L1, L3, L4, and L5 are copper strips with a thickness of 0,6 mm. Heatsink: aluminium; 0,9 K/W At PL = 100 W and VCE = 28 V, the output power at heatsink temperatures between 25 C and 90 C relative to that at 25 C is diminished by typ. 0,12 W/K. Component layout on an aluminium heatsink for 150 MHz test circuit is shown in Fig.8. Note 1. ATC means American Technical Ceramics.
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
handbook, full pagewidth
C5
L4 output 50 L5 C1 L1 L3 C7 C3 aluminium heatsink C8
C2
L2
C4
input 50
MGP549
Fig.8 Component layout on an aluminium heatsink for 150 MHz test circuit. Earthing bolts.
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
handbook, halfpage
150
MGP550
MGP551
handbook, halfpage
10
100 Gp
PL (W) 100
Gp (dB) typ 5
(%)
50
50
0 0 20 PS (W) 40
0 0 50 100 PL (W)
0 150
Fig.9
VCE = 28 V; f = 150 MHz; Th = 25 C.
Fig.10 VCE = 28 V; f = 150 MHz; Th = 25 C; typical values.
handbook, halfpage
150
MGP552
PLnom (W) (VSWR = 1) 100 Th 70 C 90 C
50
0 1 10 VSWR The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter.
102
Fig.11 R.F. SOAR; c.w. class-B operation; f = 150 MHz; VCE = 28 V; Rth mb-h = 0,2 K/W.
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
OPERATING NOTE Below 50 MHz a base-emitter resistor of 4,7 is recommended to avoid oscillation. This resistor must be effective for r.f. only.
BLW78
handbook, halfpage
3 ri, xi () 2
MGP553
xi ri ri
1
0
xi
-1 -2 -3
0
100
f (MHz)
200
VCE = 28 V; PL = 100 W; Th = 25 C; typical values; class-B operation.
Fig.12 Input impedance (series components).
handbook, halfpage
6
MGP554
handbook, halfpage
30
MGP555
RL, XL () 4 RL
Gp (dB) 20
typ 2 XL 10
0 0 100 f (MHz) 200
0 0 100 f (MHz) 200
VCE = 28 V; PL = 100 W; Th = 25 C; typical values; class-B operation.
VCE = 28 V; PL = 100 W; Th = 25 C; typical values; class-B operation.
Fig.13 Load impedance (series components).
Fig.14
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in s.s.b. class-A operation VCE = 26 V; Th = 40 C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W 35 (P.E.P.) Gp dB typ. 19,5 IC A 3 d3 dB typ. -40
BLW78
handbook, full pagewidth
C10 C1 L5 C2 C11 50 L1 L2 T.U.T. R5 C3 C4 R3 C5 R7 L3 L4 C8 C12 C13
50
R2
R4 R6 C6 C9
+VCC
BY206 C7 C14 R8
MGP556
BD136 R1
Fig.15 Test circuit; s.s.b. class-A; f = 28 MHz.
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
List of components: C1 = 33 pF ceramic capacitor (500 V) C2 = 100 pF air dielectric trimmer (single insulated rotor type) C3 = 280 pF air dielectric trimmer (single non-insulated rotor type) C4 = 180 pF polystyrene capacitor C5 = C6 = C7 = 3,9 nF ceramic capacitor C8 = 2 x 33 pF ceramic capacitors in parallel (500 V) C9 = 330 nF polyester capacitor C10 = 82 pF ceramic capacitor (500 V) C11 = 100 pF air dielectric trimmer (single insulated rotor type) C12 = 180 pF air dielectric trimmer (single non-insulated rotor type) C13 = 150 pF polystyrene capacitor C14 = 390 nF polyester capacitor L1 = 72 nH; 3 turns Cu wire (1,0 mm); int. dia. 7 mm; length 4,8 mm; leads 2 x 5 mm L2 = Cu strip (28 mm x 5 mm x 0,2 mm); 18 mm at 3 mm above printed-circuit board L3 = Ferroxcube choke coil (cat. no. 4312 020 36640) L4 = 300 nH; 6 turns Cu wire (1,5 mm); int. dia. 12 mm; length 16 mm; leads 2 x 5 mm L5 = 330 nH; 7 turns Cu wire (1,5 mm); int. dia. 12 mm; length 20,8 mm; leads 2 x 5 mm R1 = 1,5 k ( 5%) carbon resistor (0,5 W) R2 = 100 ( 5%) carbon resistor (0,5 W) R3 = 68 ( 5%) carbon resistor (0,5 W) R4 = 100 wirewound potentiometer R5 = 33 ( 5%) carbon resistor (0,5 W) R6 = 0,68 ( 10%) wirewound resistor (7 W) R7 = 120 wirewound resistor (8 W) R8 = 10 ( 10%) carbon resistor (0,5 W)
BLW78
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
handbook, halfpage
-30
MGP557
d3 (dB) -40 typ
-50
-60
0
25
P.E.P. (W)
50
Fig.16 Intermodulation distortion as a function of output power; VCE = 26 V; IC = 3 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 40 C.
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in s.s.b. class-AB operation (linear power amplifier) VCE = 28 V; Th = 25 C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W 100 (P.E.P.) Note Gp dB typ. 19 dt % typ. 42 IC A typ. 4,3 d3(1) dB typ. -30 d5(1) dB typ. -37
BLW78
IC(ZS) mA 50
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
C10 C1 L3 L1 C2 C3 C4 L2 R1 T.U.T. C7 L4 C12 C13 C11 50
50
C5 C8 temperature compensated bias (Ri < 0.1 ) C6 C9 R2 +VCC
MGP558
Fig.17 Test circuit; s.s.b. class-AB; f = 28 MHz.
List of components: C1 = C11 = 150 pF air dielectric trimmer (single insulated rotor type) C2 = 27 pF ceramic capacitor (500 V) C3 = C12 = 150 pF air dielectric trimmer (single non-insulated rotor type) C4 = 180 pF ceramic capacitor (500 V) C5 = C8 = 3,9 nF ceramic capacitor C6 = 150 F/6 V solid tantalum capacitor C7 = 150 pF ceramic capacitor (500 V) C9 = 100 nF polyester capacitor C10 = 750 pF mica dielectric trimmer (single insulated rotor type) C13 = 750 pF mica dielectric trimmer (single non-insulated rotor type) L1 = 3 turns enamelled Cu wire (1,0 mm); int. dia. 12 mm; length 12 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 3 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 12 mm L4 = 2 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 8 mm R1 = 27 ( 10%) carbon resistor (0,5 W) R2 = 4,7 ( 10%) carbon resistor (0,5 W)
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
handbook, halfpage
-20
MGP559
d3, d5 (dB) -30 d3
-40 d5
-50
0
50
P.E.P. (W)
100
Typical values; VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C.
Fig.18 Intermodulation distortion(1) as a function of output power.
handbook, halfpage
MGP560
10
MGP561
0 xi ()
handbook, halfpage
30
ri ()
xi
Gp (dB) 20 -5
5
10 ri 0 1 0 1 10 102 10 f (MHz) VCE = 28 V; IC(ZS) = 50 mA; PL = 100 W (P.E.P.); Th = 25 C; ZL = 2,7 . -10 102
f (MHz)
VCE = 28 V; IC(ZS) = 50 mA; PL = 100 W (P.E.P.); Th = 25 C; ZL = 2,7 .
Fig.20 Input impedance (series components).
Fig.19 Power gain as a function of frequency. Figs 19 and 20 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. August 1986 14
Philips Semiconductors
Product specification
HF/VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW78
SOT121B
D
A F q U1 C B
H L b
c
4
3
w2 M C A
p
U2
D1
U3
w1 M A B
1
H
2
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.17 0.286 0.243 b 5.82 5.56 c 0.16 0.10 D D1 F 2.67 2.41 H 28.45 25.52 L 7.93 6.32 p 3.30 3.05 Q 4.45 3.91 q 18.42 U1 24.90 24.63 0.98 0.97 U2 6.48 6.22 0.255 0.245 U3 12.32 12.06 0.485 0.475 w1 0.51 0.02 w2 1.02 45 0.312 0.130 0.249 0.120 0.175 0.725 0.154 0.04
12.86 12.83 12.59 12.57
0.229 0.006 0.219 0.004
0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005
OUTLINE VERSION SOT121B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
15
Philips Semiconductors
Product specification
HF/VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW78
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
16

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